High-resolution quantum-dot light-emitting diodes with dual optical and electrical isolation enabled by black matrix barriers

초록

High-resolution quantum-dot light-emitting diodes (QD-LEDs) require precise pixel isolation to suppress optical and electrical interferences, which is essential for next-generation near-to-eye displays (NEDs). In this study, we introduce a black matrix (BM), a negative photoresist-based insulating barrier that isolates pixels and prevents direct layer contact. Unlike transparent blocking materials, the BM offers both high optical density and excellent electrical insulation, effectively suppressing both optical and electrical crosstalk. The BM can be patterned using a simple photolithography process with resolutions down to 5 μm (2540 PPI). The resulting BM-QD-LEDs demonstrate an external quantum efficiency of 7.0% and luminance of 7503 cd m−2 without performance degradation. Moreover, the BM-based strategy is compatible with both inverted and standard device structures and can be universally applied to red, green, and blue QD materials, highlighting its broad versatility. This approach provides a scalable, damage-free solution for high-resolution QD electroluminescent displays and offers a promising path for next-generation NEDs applications. © 2026 Elsevier B.V.

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