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Azobenzene Molecular Effects on Solution-Processed Y-In-Zn-O Thin-Film Transistors Treated with Light
- Jung, Yoon Ho;
- Kim, Seon Yeong;
- Jeong, Hae-Chang;
- Park, Hong-Gyu;
- Kim, Dai-Hyun;
- ... Kim, Tae-Wan;
- 외 1명
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0초록
A solution-processed yttrium indium zinc oxide (YIZO) channel layer was mixed with azobenzene to generate oxide thin-film transistors (TFTs). Because azobenzene has two different molecular structures, cis- and trans-azobenzene YIZO TFTs were compared. In an electrical analysis, it was found that the structural differences affect the electrical properties. The trans-azobenzene YIZO (TA-YIZO) TFTs produced greater channel densities and lower trap densities than the cis-azobenzene YIZO (CA-YIZO) TFTs. The TA-YIZO exhibited superior characteristics with a mobility of 0.44 cm(2)/V.s, a threshold voltage (V-TH) of 5.01 V, a sub-threshold swing of 0.74 V/decade, and an on/off ratio greater than 10(6). (C) 2014 The Electrochemical Society. All rights reserved.
키워드
- 제목
- Azobenzene Molecular Effects on Solution-Processed Y-In-Zn-O Thin-Film Transistors Treated with Light
- 저자
- Jung, Yoon Ho; Kim, Seon Yeong; Jeong, Hae-Chang; Park, Hong-Gyu; Kim, Dai-Hyun; Kim, Tae-Wan; Seo, Dae-Shik
- 발행일
- 2014
- 유형
- Article
- 권
- 3
- 호
- 9
- 페이지
- A51 ~ A53
- 언어
- ENG
- 출판사
- ELECTROCHEMICAL SOC INC
- 발행국가
- 미국
- ISSN
- E 2162-8750
P 2162-8742