Azobenzene Molecular Effects on Solution-Processed Y-In-Zn-O Thin-Film Transistors Treated with Light

  • Jung, Yoon Ho; 
  • Kim, Seon Yeong; 
  • Jeong, Hae-Chang; 
  • Park, Hong-Gyu; 
  • Kim, Dai-Hyun; 
  • ... Kim, Tae-Wan; 
  • 외 1명
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초록

A solution-processed yttrium indium zinc oxide (YIZO) channel layer was mixed with azobenzene to generate oxide thin-film transistors (TFTs). Because azobenzene has two different molecular structures, cis- and trans-azobenzene YIZO TFTs were compared. In an electrical analysis, it was found that the structural differences affect the electrical properties. The trans-azobenzene YIZO (TA-YIZO) TFTs produced greater channel densities and lower trap densities than the cis-azobenzene YIZO (CA-YIZO) TFTs. The TA-YIZO exhibited superior characteristics with a mobility of 0.44 cm(2)/V.s, a threshold voltage (V-TH) of 5.01 V, a sub-threshold swing of 0.74 V/decade, and an on/off ratio greater than 10(6). (C) 2014 The Electrochemical Society. All rights reserved.

키워드

OXYGEN VACANCY; OXIDE; TEMPERATURE
제목
Azobenzene Molecular Effects on Solution-Processed Y-In-Zn-O Thin-Film Transistors Treated with Light
저자
Jung, Yoon Ho; Kim, Seon Yeong; Jeong, Hae-Chang; Park, Hong-Gyu; Kim, Dai-Hyun; Kim, Tae-Wan; Seo, Dae-Shik
DOI
10.1149/2.0091409ssl
발행일
2014
유형
Article
저널명
ECS Solid State Letters
권
3
호
9
페이지
A51 ~ A53