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Al과 Ni를 이용한 비정질 실리콘의 결정화 거동
- 권순규;
- 최균;
- 김병익;
- 황진하
초록
Metal-induced crystallization (MIC) of amourphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after aluminum-induced crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.
키워드
- 제목
- Al과 Ni를 이용한 비정질 실리콘의 결정화 거동
- 제목 (타언어)
- Crystallization behavior of Amorphous Silicon with Al and Ni
- 저자
- 권순규; 최균; 김병익; 황진하
- 발행일
- 2006
- 저널명
- 한국세라믹학회지
- 권
- 43
- 호
- 4
- 페이지
- 7 ~ 7
- 출판사
- 한국세라믹학회
- 발행국가
- 대한민국
- 분량
- 1 페이지
- ISSN
- E 2234-0491
P 1229-7801