Al과 Ni를 이용한 비정질 실리콘의 결정화 거동

Crystallization behavior of Amorphous Silicon with Al and Ni

초록

Metal-induced crystallization (MIC) of amourphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after aluminum-induced crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.

키워드

MIC; AIC; metal-induced; crystallization; MIC; AIC; metal-induced; crystallization
제목
Al과 Ni를 이용한 비정질 실리콘의 결정화 거동
제목 (타언어)
Crystallization behavior of Amorphous Silicon with Al and Ni
저자
권순규; 최균; 김병익; 황진하
발행일
2006
저널명
한국세라믹학회지
권
43
호
4
페이지
7 ~ 7