Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon

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2
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2

초록

We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. This work focuses on a study of strain effects in VDP stress sensors, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. The stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors.

키워드

VDP (van der Pauw) strain effects (111) silicon stress sensorspiezo-resistive coefficients
제목
Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon
저자
Cho, Chun-HyungChoi, GinkyuCha, Ho-Young
DOI
10.1587/transele.E93.C.640
발행일
2010-05
유형
Article
저널명
IEICE Transactions on Electronics
E93C
5
페이지
640 ~ 643