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A Fast Half Adder using 8T SRAM for Computation-in-Memory
- Han, Jaehyeon;
- Kim, Youngmin
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13초록
The conventional Von Neumann computing architecture faces limitation as data intensive applications have increased. To solve the problem, the new computing platform "computation-in-memory" has been introduced. In this study, a new design of the half adder implemented in memory array using 8T static random-access memory (SRAM) and latch-type sense amplifier is proposed. This design uses four logic gates to implement a half adder. It reduces time delay of getting the final value by 33% compared to the former architecture of the half adder which uses five logic gates.
키워드
Half Adder; Computation in Memory; Processing in Memory; SRAM; CELL
- 제목
- A Fast Half Adder using 8T SRAM for Computation-in-Memory
- 저자
- Han, Jaehyeon; Kim, Youngmin
- 발행일
- 2021
- 유형
- Proceedings Paper
- 저널명
- 2021 IEEE INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS-ASIA (ICCE-ASIA)
- 언어
- ENG
- 출판사
- IEEE
- 발행국가
- 미국
- ISSN
- P 0000-0000