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Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at-5V
- Lee, Kwang H.;
- Lee, Kimoon;
- Oh, Min Suk;
- Choi, Jeong-M.;
- Im, Seongil;
- ... Kim, Eugene;
- 외 1명
WEB OF SCIENCE
36SCOPUS
39초록
We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230 nm-thick double polymer dielectric composed of 30 nm-thin low-k poly-4-vinyphenol (PVP) and 200 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of similar to 2 MV/cm, a high capacitance of 26 nF/cm(2) with k = similar to 7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm(2)/V s, a threshold voltage of -2.5 V, and on/off ratio of 10(3) stably operating under -5V. (C) 2008 Elsevier B.V. All rights reserved.
키워드
- 제목
- Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at-5V
- 저자
- Lee, Kwang H.; Lee, Kimoon; Oh, Min Suk; Choi, Jeong-M.; Im, Seongil; Jang, Sungjin; Kim, Eugene
- 발행일
- 2009-02
- 유형
- Article
- 권
- 10
- 호
- 1
- 페이지
- 194 ~ 198