Atomic Layer Deposition of Epitaxial Semimetal Contacts for 2D Transistors

초록

This work reports 8 -inch wafer-scale epitaxial atomic-layer deposition (ALD) Sb contact for two-dimensional (2D) transistors using intermediate-enhanced ALD (IE-ALD) and epitaxial de-chalcogenation, achieving a record-low ALD contact resistance (RC) of 0.6 kOhm cdot μ m for MoS2. Leveraging ALD conformality, we demonstrated for the first time an epitaxial contact-all-around (C-AA) structure, extending the contact interface beyond conventional planar geometries. Density functional theory (DFT) calculations show that the charge-transfer efficiency of the C-AA structure exceeds that of conventional Sb top-contacts. © 2026 IEEE.