Highly efficient electroluminescence devices with a mixed layer of SnO2 and colloidal quantum dots

초록

We demonstrate the high efficiency of quantum dot light-emitting diodes (QLEDs) that consist of a mixed layer of SnO2 nanoparticles (NPs) and quantum dots (QDs). A stable mixture of SnO2 NPs and QDs is prepared in chlorobenzene and then applied to QLEDs with no separate electron transport layer (ETL). QLEDs with such a simplified structure produce a maximum luminance of 142,855 cd/m(2), an EQE of 9.42%, and a current efficiency of 41.18 cd/A that result from the improved charge balance of the mixed layer. This produces one of the best device performances of QLEDs with a non-ZnO inorganic ETL, clearly indicating the remarkable promise of using SnO2 NPs as an inorganic ETL for QLEDs. Moreover, the reduction of fabrication steps in this solution-based process proves advantageous to next-generation display technology.

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