Line-Edge Roughness Stochastics for 5-nm Pattern Formation in the Extreme Ultraviolet Lithography

초록

The extreme ultraviolet (EUV) lithography has the potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, but faces a number of persistent challenges. At the 5-nm technology node, a precise process simulator with nanometer accuracy will be required. For a precise simulation, the better understanding the EUV process mechanism is critical for the improvement of resist performance and the development of new resist materials. In this paper, an EUV stochastic simulator is introduced for the modeling of EUV processes. The line-edge roughness (LER) and resist characters are described for the requirements of 5-nm pattern performance using this stochastic simulation. Through the opportunity to simulate EUVL materials and processes, the performance of EUVL resist and the optimization of EUVL parameters for 5-nm pattern formation can be conducted.

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