Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN

초록

Nonpolar n-ZnO/p-GaN heterojunction light emitting diode has been demonstrated with a-plane (11 (2) over bar0) ZnO active layer grown by a facile low-cost solution growth method at low temperature of 90 degrees C. High quality nonpolar ZnO planar film without seed layer was directly formed on a-plane GaN template due to the anisotropic growth rates along the specific crystallographic directions. The turn on voltage of the device was as low as 3 V, and narrow stable UV-blue electroluminescence emissions with peak wavelength of 392 to 420 nm under various forward bias conditions at room temperature were observed. (C) 2013 AIP Publishing LLC.

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