Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

초록

Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO2. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 degrees C, the bottom gate tin oxide TFTs show an on/off drain current ratio of 10(6) while the device mobility values were increased from 2.31 cm(2)/V s to 6.24 cm(2)/V s upon increasing the deposition temperature of the tin oxide films. (C) 2012 Elsevier Ltd. All rights reserved.

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