Transverse Deflection for Extreme Ultraviolet Pellicles

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5
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초록

Defect control of extreme ultraviolet (EUV) masks using pellicles is challenging for mass production in EUV lithography because EUV pellicles require more critical fabrication than argon fluoride (ArF) pellicles. One of the fabrication requirements is less than 500 (Formula presented.) transverse deflections with more than 88% transmittance of full-size pellicles (112 (Formula presented.)   (Formula presented.) 145 (Formula presented.)) at pressure 2 (Formula presented.). For the nanometer thickness (thickness/width length ((Formula presented.)) = 0.0000054) of EUV pellicles, this study reports the limitation of the student’s version and shear locking in a commercial tool-based finite element method (FEM) such as ANSYS and SIEMENS. A Python program-based analytical-numerical method with deep learning is described as an alternative. Deep learning extended the ANSYS limitation and overcame shear locking. For EUV pellicle materials, the ascending order of transverse deflection was (Formula presented.) - (Formula presented.) in both ANSYS and a Python program, regardless of thickness and pressure. According to a neural network, such as the Taguchi method, the sensitivity order of EUV pellicle parameters was (Formula presented.). © 2023 by the author.

키워드

computational lithographyEUV lithographyEUV maskEUV pellicleextreme ultravioletpellicle simulationtransverse deflection
제목
Transverse Deflection for Extreme Ultraviolet Pellicles
저자
Kim, S.-K.
DOI
10.3390/ma16093471
발행일
2023-05-01
유형
Article
저널명
Materials
16
9