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Semi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric
- Hyung, Gun Woo;
- Wang, Jian-Xun;
- Li, Zhao-Hui;
- Koo, Ja-Ryong;
- Kwon, Sang Jik;
- ... Kim, Young Kwan;
- 외 1명
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4초록
We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with cross-linked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 Omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum similar to 5.8 cm(2)/Vs) and on/off current ratios of similar to 10(6).
키워드
Amorphous InGaZnO Transistor; Polymeric Gate Dielectric Layer; Flexible Substrate; Semi-Transparent; ZINC-OXIDE; PERFORMANCE; FABRICATION
- 제목
- Semi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric
- 저자
- Hyung, Gun Woo; Wang, Jian-Xun; Li, Zhao-Hui; Koo, Ja-Ryong; Kwon, Sang Jik; Cho, Eou-Sik; Kim, Young Kwan
- 발행일
- 2013-06
- 유형
- Article
- 권
- 13
- 호
- 6
- 페이지
- 4052 ~ 4055
- 언어
- ENG
- 출판사
- AMER SCIENTIFIC PUBLISHERS
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- E 1533-4899
P 1533-4880