Atomic Layer Deposition of ZrO2 Films at High Temperatures (>350 °C) Using a Modified Cyclopentadienyl Zr Precursor

초록

With tris(dimethylamino)cyclopentadienyl metal (CpX(NMe2)(3)) precursors, the optimum process temperature of atomic layer deposition (ALD) is higher for HfO2 films (similar to 350 degrees C) than ZrO2 films (similar to 320 degrees C). Since simultaneous ALD of the two films is required in Hf x Zr(1-x )O(2 )film processes, the optimum ALD temperatures of the two films need to be adjusted equally. The cyclopentadienyl Zr precursor (MCPZr) introduced in this study exhibits better thermal stability than that of CpZr(NMe2)(3). ZrO2 films were grown using CpZr(NMe2)(3) and MCPZr at 350 degrees C, the optimum ALD temperature of the HfO2 film using CpHf(NMe2)(3), and the growth behavior and physicochemical and electrical properties were compared. The physical density was higher, and the impurity concentration was lower for the film grown using MCPZr compared to the film grown using CpZr(NMe2)(3). The electrical properties of dielectric constant, leakage current, and dielectric breakdown also improved due to the improved physicochemical properties.

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