Effects of Thermal Annealing on the Electronic Structure and Hole-Injection Properties of Molybdenum-Doped Zinc Oxide/Organic Semiconductor Interfaces

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초록

In this paper, we investigate an electronic structure and hole-injection properties of organic light-emitting devices (OLEDs) based on molybdeum-doped zinc oxide (MZO) anode. Our studies reveal that operation voltage and current efficiency of the device are associated with work function and surface roughness of anode, respectively. From the experimental results, we found that the formation of S-metal bonds and the removal of dangling bonds in the thermal-annealed MZO film could lead to an increase in the surface energy and the work function, meaning that thermal-annealing might be more helpful in improving the efficiency of MZO based organic devices. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.030206esl] All rights reserved.

키워드

LIGHT-EMITTING-DIODES; INDIUM TIN OXIDE; ZNO THIN-FILMS; DEVICES; ANODE; ENHANCEMENT
제목
Effects of Thermal Annealing on the Electronic Structure and Hole-Injection Properties of Molybdenum-Doped Zinc Oxide/Organic Semiconductor Interfaces
저자
Chun, Ji-Yun; Han, Jin-Woo; Kim, Tae-Wan; Seo, Dae-Shik
DOI
10.1149/2.030206esl
발행일
2012
유형
Article
저널명
Electrochemical and Solid-State Letters
권
15
호
6
페이지
J31 ~ J34