Normally-Off AlGaN/GaN-on-Si Power Switching Device with Embedded Schottky Barrier Diode

초록

We have demonstrated a novel AlGaN/GaN power switching device with an embedded Schottky barrier diode. The normally-off transistor mode was implemented with a recessed metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) configuration in which a Schottky barrier diode (SBD) was embedded to flow the reverse current. The proposed device is very promising for use in high-efficiency converter and inverter ICs. The prototype device exhibited encouraging characteristics: a turn-on voltage of 2 V for the transistor and a forward turn-on voltage of 0.8 V for the embedded diode. The breakdown voltage for the anode-to-cathode distance of 10 mu m was 966 V. (C) 2013 The Japan Society of Applied Physics

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