Probing and passivating electron traps at the MAPbI(3)/TiO2 interface

초록

We developed a test platform structure to probe interfacial charge transport/transfer at the methyl-ammonium lead iodide (MAPbI(3))/TiO2 interface, demonstrating that trap density in the MAPbI(3) close to TiO2 is far lower than that without TiO2, evidenced from the gate voltage-dependent threshold voltage difference based on field effect transistor (FET) structure. We found that the TiO2 layer plays a crucial role in electronic passivation of the SiO2 surface, while a rough surface suppresses efficient charge transport at a large area between the source and drain electrodes.

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