Improvement of Turn-On Voltage and Charge Injection in Organic Light-Emitting Diodes Comprising Ga Doped In-Zn-O Anode by Thermal Annealing

초록

Ga doped In-Zn-O (IZO:Ga) films were grown using a radio-frequency (RF) magnetron cosputtering system. The sputtered film was thermally annealed in the temperature range from room temperature to 250 degrees C, and the work function of these films ranged from 5.12 to 5.23 eV, which is higher than that of ITO (4.7 eV). Organic light-emitting diodes (OLEDs) using the IZO: Ga anode annealed at 200 degrees C show a lower turn-on voltage and a higher current efficiency than those of ITO-based control devices. These results demonstrate that the IZO: Ga is a good anode candidate for OLEDs.

키워드