Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors

초록

In this study, we investigate the origins of low-frequency noise (LFN) and 1/f noise in Cu2O thin-film transistors (TFTs). The static direct current (DC) I-V characterization demonstrates that the channel resistance (R ch) contributes significantly to mobility degradation in the TFTs, with channel thickness (t ch) controlled through the plasma-enhanced atomic layer deposition (PEALD) process. The 1/f noise followed the Hooge mobility fluctuation (HMF) model, and it was observed that both Coulomb and phonon scattering within the channel, which increased with a decrease in t ch, contributed simultaneously. Increased R ch contributed more significantly to the 1/f noise than to the contact resistance (R C), as evidenced by the R C configuration of the measurements, which also revealed that R C depends upon t ch. This study demonstrates that t ch is a major noise source in Cu2O TFTs and presents guidelines for the development of Cu2O TFTs and potential high-mobility p-type oxide semiconductors.

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