Modulation of charge transfer at the pentacene/graphene quantum dot interface by localized surface plasmonic resonance

초록

We, for the first time, quantified localized surface plasmon resonance (LSPR)-induced charge transfer, and tuned charge carrier concentration in field-effect transistors (FETs) by incorporating silver nanoparticles (Ag NPs) at the pentacene/graphene quantum dot (GQD) interface. This resulted in a significant threshold voltage shift under illumination at a resonance frequency of 450 nm, primarily due to LSPR-induced charge transfer at the Ag NP/GQD interface. Further, the formation of an Ag NP-induced interface dipole in the dark accumulated holes in the pentacene layer in the absence of the gate electric field. Our research not only contributes to a deeper understanding of the interplay between plasmonics and semiconductor physics but also paves the way for new applications in electronics and photonics. © 2024 The Author

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