ZnO-based low voltage inverter with low-k/high-k double polymer dielectric layer

초록

We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n-channel ZnO thin-film transistors (TFTs) with a low-k poly-4-vinylphenol and high-k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of similar to 0.3 cm(2)/V s and our inverter operates with a voltage gain of similar to 4 at low supplied voltages (5-7 V), demonstrating a dynamic response of similar to 20 ms.

키워드