상세 보기
초록
Herein, we report the enhanced thermoelectric performance of Cu incorporated Bi2Te2.7Se0.3 prepared by melt spinning. The electronic transport properties were significantly improved by Cu incorporation due to the synergetic effect of carrier tuning, band modification, and electron-phonon transport control. The steady dimensionless thermoelectric figure of merit higher than 0.90 was achieved in the wide range of temperature range of 350-450 K for Cu0.008Bi2Te2.7Se0.3, which is similar to 30% enhancement in comparison with pristine Bi2Te2.7Se0.3. This result can lead to high thermoelectric power generation efficiency 4.2% at Delta T = 180 K. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
키워드
Thermoelectric; Bi2Te2.7Se0.3; Cu incorporation; Carrier tuning; Band modification; THERMOELECTRIC PROPERTIES; TRANSPORT-PROPERTIES; AG
- 제목
- Cu-incorporation by melt-spinning in n-type Bi2Te2.7Se0.3 alloys for low-temperature power generation
- 저자
- Kim, Minyoung; Kim, Sang-il; Cho, Hyun-joon; Mun, Hyuna; Kim, Hyun-sik; Lim, Jae-Hong; Kim, Sung Wng; Lee, Kyu Hyoung
- 발행일
- 2019-07
- 유형
- Article
- 권
- 167
- 페이지
- 120 ~ 125