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Improvement of device performance by co-doping of an emitting dopant with hole- and electron-transport materials
- Park, N.R.;
- Ryu, G.Y.;
- Lim, D.H.;
- Lee, S.J.;
- Kim, Y.K.;
- 외 1명
Citations
SCOPUS
0초록
We demonstrated that the efficiency of green organic light-emitting diodes (OLEDs) was improved by co-doping with hole transport material, N′-bis-(1-naphyl)-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPB) and electron transport material, bis(2-methyl-8- quninolinato)-4-phenylphenolate aluminum (BAlq), into emitting layer. Co-doping with NPB and BAlq can improve charge balance which makes it possible to enhance device efficiency. The maximum luminous and quantum efficiency of BDAT-P doped device was measured to be 5.56 cd/A and 1.99%, respectively. Device co-doped with NPB, BAlq and BDAT-P resulted in the most efficient device, in which maximum luminous and quantum efficiency were 8.36 cd/A and 3.19%, respectively.
키워드
BDAT-P; Co-doping; Green emission; Organic light-emitting diodes
- 제목
- Improvement of device performance by co-doping of an emitting dopant with hole- and electron-transport materials
- 저자
- Park, N.R.; Ryu, G.Y.; Lim, D.H.; Lee, S.J.; Kim, Y.K.; Shin, D.M.
- 발행일
- 2011
- 유형
- Conference Paper
- 저널명
- Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
- 권
- 2
- 페이지
- 72 ~ 75
- 언어
- ENG
- 분량
- 4 페이지
- ISSN
- P 0000-0000