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Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET
- Lee, Jung-Yeon;
- Park, Bong-Ryeol;
- Lee, Jae-Gil;
- Lim, Jongtae;
- Cha, Ho-Young
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2초록
In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD SiO2 film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at 350 degrees C in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.
키워드
AlGaN/GaN heterostructure; forming gas annealing; interface trap density; MOSHFET; post metallization annealing; INTERFACE; STATES; HEMT
- 제목
- Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET
- 저자
- Lee, Jung-Yeon; Park, Bong-Ryeol; Lee, Jae-Gil; Lim, Jongtae; Cha, Ho-Young
- 발행일
- 2015-02
- 유형
- Article
- 권
- 15
- 호
- 1
- 페이지
- 16 ~ 21
- 언어
- ENG
- 출판사
- IEEK PUBLICATION CENTER
- 발행국가
- 대한민국
- 분량
- 6 페이지
- ISSN
- E 2233-4866
P 1598-1657