Off-state leakage characteristics for p-GaN gate HEMTs with source via trench insulated oxide layer

초록

This study demonstrates that integrating a source via trench (SVT) with an oxide insulation layer into p-GaN gate high electron mobility transistors (HEMTs) effectively reduces off-state leakage current and enhances breakdown voltage. The SVT, formed beneath the source contact and isolated by an oxide layer, modulates the band bending at the trench/GaN buffer interface toward the substrate. This configuration enables tunable control of the surface current beneath the source by adjusting the oxide thickness. Consequently, the off-state leakage current is significantly suppressed, and the breakdown voltage is improved. It is proposed that the additional surface current suppresses the injection of electrons from the source to the drain, thereby reducing the impact ionization rate in the access region. © 2026

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