Ultralow Electric and Photonic Noise MoS2Transistors for Noise-Limited Multistate Readout

초록

Two-dimensional (2D) van der Waals (vdW) semiconductors offer a compelling route toward co-integrated logic, memory, and optoelectronic sensing. However, their performance is often constrained by defect-mediated contact resistance, and its impact on low-frequency noise (LFN) and signal resolution remains under-quantified. Here we demonstrate antimony (Sb)-contact monolayer MoS2 transistors that simultaneously deliver ultralow 1/f noise and high phototransistor gain, offering high photonic resolution. Sb contacts exhibit reduced contact-limited transport and lower contact-related carrier fluctuations than Au-contact reference devices, leading to near-ohmic-like injections and a reduced LFN. Furthermore, under illumination, the devices exhibit high photogating-enabled responsivity (1.33 & times; 105 A/W) and detectivity (7.50 & times; 1015 Jones) under the measurement conditions used in this work without a discernible illumination-induced excess noise. Leveraging the exceptional ultralow-noise and high-gain characteristics of the Sb-contact MoS2 transistors, we provide an LFN-to-photonic-resolution metric that translates fluctuation-induced noise into information fidelity. This work translates contact engineering of vdW semiconductors into a direct lever for information-fidelity-limited 2D logic and optoelectronics.

키워드