Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

초록

We investigated the growth behavior of GaN grown on AlN along with V/III ratio and pressure variation, and found out the lateral growth regime for the fully coalesced channel layer of the AlN-based double-hetero structure high electron mobility transistor (HEMT). When the V/III ratio increases and pressure decreases, compressive stress in the GaN channel increases, and pit formation occurs to release the stress. The AlN-based HEMT structure was grown and the device was fabricated with an optimized channel layer. The two-dimensional electron gas mobility, sheet density, and sheet resistance were 1480;cm(2);V-?1 s(?1), 1.32;;10(13) cm(?2), and 319 ?/sq., respectively, at room temperature. The device was characterized; direct current output result showed that the maximum current was ?620;mA;mm(?1), on-resistance was 6.4 ? mm, transconductance was ?140;mS;mm(?1), and current on/off ratio was ?10(4), respectively.

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