Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors

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초록

The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole–Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities (SI) obtained from the LFN measurements followed 1/f noise shapes and exhibited a constant electric field (E) × SI/I2 noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry. © 2022 by the authors.

키워드

ferroelectric; HfO2; low-frequency noise
제목
Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors
저자
Im, K.-S.; Shin, S.; Jang, C.-H.; Cha, H.-Y.
DOI
10.3390/ma15217475
발행일
2022-11-01
유형
Article
저널명
Materials
권
15
호
21