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Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors
- Im, K.-S.;
- Shin, S.;
- Jang, C.-H.;
- Cha, H.-Y.
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7초록
The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole–Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities (SI) obtained from the LFN measurements followed 1/f noise shapes and exhibited a constant electric field (E) × SI/I2 noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry. © 2022 by the authors.
키워드
ferroelectric; HfO2; low-frequency noise
- 제목
- Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors
- 저자
- Im, K.-S.; Shin, S.; Jang, C.-H.; Cha, H.-Y.
- 발행일
- 2022-11-01
- 유형
- Article
- 저널명
- Materials
- 권
- 15
- 호
- 21
- 언어
- ENG
- 출판사
- MDPI
- 발행국가
- 스위스
- ISSN
- E 1996-1944
P 1996-1944