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Investigation on Hydrothermal Growth of a-Plane ZnO Using Epitaxial Lateral Overgrowth
- Son, Pyunghee;
- Baik, Kwang Hyeon;
- Jang, Soohwan
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4초록
The growth mechanism and the crystallinity of hydrothermally synthesized nonpolar a-plane ZnO ( a-ZnO) on a-plane GaN template were investigated by using epitaxial lateral overgrowth (ELO) patterns parallel or perpendicular to the c-axis direction. Due to the anisotropic growth rates along the specific crystallographic directions, lateral overgrowth of a-ZnO was observed only for ZnO grown on the ELO stripe patterns perpendicular to the c-axis direction. In X-ray diffraction analysis, a-ZnO grown on the c-axis parallel patterns had smaller FWHM values of the X-ray rocking curves along the X-ray in-beam orientations in the c-and the m-axis directions. (C) The Author(s) 2015. Published by ECS.
키워드
GAN; NANORODS; DIODES; FILMS
- 제목
- Investigation on Hydrothermal Growth of a-Plane ZnO Using Epitaxial Lateral Overgrowth
- 저자
- Son, Pyunghee; Baik, Kwang Hyeon; Jang, Soohwan
- 발행일
- 2015
- 유형
- Article
- 권
- 4
- 호
- 3
- 페이지
- Q1 ~ Q3
- 언어
- ENG
- 출판사
- ELECTROCHEMICAL SOC INC
- 발행국가
- 미국
- ISSN
- E 2162-8750
P 2162-8742