Investigation on Phase-change Synapse Devices for More Gradual Switching

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초록

The architecture of phase-change synapses that can have more intermediate states was studied by means of TCAD simulation. After thorough investigation on the cell geometry effects, it was found that the line-and-space type architecture yields more intermediate states but consumes more power than the confined architecture does. In fact, phase-change memory has evolved from the former to the latter to achieve better power efficiency and more abrupt transition. This trade-off between the cell architectures must be overcome to make a synapse with both less power and gradual transition.

키워드

Neuromorphic computing; phase-change; synapse device; device simulation; thermal analysis; THERMAL-BOUNDARY RESISTANCE; CRYSTALLIZATION; GE2SB2TE5
제목
Investigation on Phase-change Synapse Devices for More Gradual Switching
저자
Shin, Minkyu; Min, Kyunghwan; Shim, Hayeon; Kwon, Yongwoo
DOI
10.5573/JSTS.2019.19.1.008
발행일
2019-02
유형
Article
저널명
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
권
19
호
1
페이지
8 ~ 17