Dual-Functional Ag Nanodots for Polarity-Tunable and Plasmonically Enhanced Perovskite Phototransistors

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초록

Integrating metal-dielectric interfaces into hybrid perovskites offers a robust strategy for the simultaneous control of optical and electrical properties. This study demonstrates high-performance methylammonium lead triiodide (MAPbI3) phototransistors functionalized with Ag nanodots, which serve a dual role as potent p-type dopants and plasmonic antennas. Upon Ag deposition, the devices exhibit a dramatic transition from n-type to p-type characteristics, marked by a substantial threshold voltage shift (from 15 V to −10 V). This polarity reversal induces high hole concentrations, enabling high-conductance states even without external gate bias. Simultaneously, localized surface plasmon resonance from the Ag nanodots enhances the photoresponse by an order of magnitude at 450 nm. Our findings reveal that Ag nanodots go beyond passive scattering, acting as active interfaces that modulate Fermi levels and amplify light-matter interactions, providing a versatile platform for advanced perovskite optoelectronics. © 2026 American Chemical Society

키워드

Ag dotMAPbI<sub>3</sub>perovskitephototransistorsurface plasmon resonance
제목
Dual-Functional Ag Nanodots for Polarity-Tunable and Plasmonically Enhanced Perovskite Phototransistors
저자
Kim, HyunsikPark, Byoungnam
DOI
10.1021/acsaelm.6c00452
발행일
2026-05-12
유형
Article
저널명
ACS Applied Electronic Materials
8
9
페이지
4304 ~ 4312