4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency

Liu, Handin; Mcintosh, Dion; Bai, Xiaogang; Pan, Huapu; Liu, Mingguo; Campbell, Joe C.; Cha, Ho Young

doi:10.1109/LPT.2008.928823

상세 보기

4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency

Liu, Handin;
Mcintosh, Dion;
Bai, Xiaogang;
Pan, Huapu;
Liu, Mingguo;
... Cha, Ho Young;
외 1명

Citations

WEB OF SCIENCE

44

Citations

SCOPUS

57

초록

We report a 4H-SiC PIN recessed-window avalanche photodiode with a peak responsitivity of 136 mA/W (external quantum efficiency = 60%) at lambda = 262 nm, corresponding to more than a 50% increase in external quantum efficiency compared to nonrecessed structures. The dark current was 90 pA at a photocurrent gain of 1000. Avalanche gains of over 10(6), k similar to 0.1, and a spatially uniform response were achieved.

키워드

Avalanche photodiodes (APDs); photodetector; silicon carbide; ultraviolet (UV) detector

제목: 4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency

저자: Liu, Handin; Mcintosh, Dion; Bai, Xiaogang; Pan, Huapu; Liu, Mingguo; Campbell, Joe C.; Cha, Ho Young

DOI: 10.1109/LPT.2008.928823

발행일: 2008-09

유형: Article

저널명: IEEE Photonics Technology Letters

권: 20

호: 17-20

페이지: 1551 ~ 1553

언어: ENG

출판사: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

발행국가: 미국

분량: 3 페이지

ISSN: E 1941-0174
P 1041-1135