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Nonpolar light-emitting diodes using hydrothermally grown a-plane ZnO
- Kim, H.;
- Baik, K.H.;
- Jang, S.
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0초록
High quality a-plane (11-20) ZnO film has been successfully grown on a-plane GaN template by facile, low-cost, seed-layer-free hydrothermal solution method at low temperature. The surface of ZnO film consists of m-plane (1-100), which has the slowest growth rate and stable surface energy. Crystalline structure and morphology of a-plane ZnO were analyzed with XRD, TEM, SEM, and AFM. Furthermore, nonpolar a-plane n-ZnO/p-GaN light emitting diodes which showed sharp near-UV emissions at the low voltage of 3.5 V were fabricated. © The Electrochemical Society.
키워드
Gallium nitride; Metallic films; Zinc oxide; A-plane GaN; Crystalline structure; High quality; Hydrothermal solution; Hydrothermally; Low temperatures; Low voltages; Stable surfaces; Light emitting diodes
- 제목
- Nonpolar light-emitting diodes using hydrothermally grown a-plane ZnO
- 저자
- Kim, H.; Baik, K.H.; Jang, S.
- 발행일
- 2013
- 유형
- Proceedings Paper
- 저널명
- ECS Transactions
- 권
- 58
- 호
- 8
- 페이지
- 11 ~ 15