Annealing Ambient and Film Thickness Dependent NO<inline-formula> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula> Response and 1/<italic>f</italic> Noise Characteristics of IGZO Resistor-Type Gas Sensors

  • Shin, Wonjun
  • Koo, Ryun-Han
  • Hong, Seongbin
  • Jeong, Yujeong
  • Jung, Gyuweon
  • ... Lee, Sung-Tae
  • 외 1명
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초록

This study investigates the effects of post-deposition annealing (PDA) ambient and film thickness on the low-frequency noise (LFN) of IGZO thin film gas sensors. Various thicknesses of IGZO thin films are deposited and subjected to post-annealing in different ambient conditions. The oxygen vacancy-rich characteristics of the IGZO films lead to enhanced response and reduced 1/<italic>f</italic> noise when post-annealed in a vacuum environment. The thinner IGZO material exhibits a greater response than the thicker film, albeit at the expense of more noise. Consequently, the signal-to-noise ratio (SNR) of the 30 nm IGZO film post-annealed in a vacuum environment is the largest. IEEE

키워드

AnnealingConductivityGas detectorsGas sensorIGZOlimit of detection (LOD)low-frequency noise (LFN)NO<inline-formula xmlns:ali=http://www.niso.org/schemas/ali/1.0/ xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink xmlns:xsi=http://www.w3.org/2001/XMLSchema-instance> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula>SensorsSignal to noise ratiosignal-to-noise ratio (SNR)Temperature measurementThickness measurement
제목
Annealing Ambient and Film Thickness Dependent NO<inline-formula> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula> Response and 1/<italic>f</italic> Noise Characteristics of IGZO Resistor-Type Gas Sensors
저자
Shin, WonjunKoo, Ryun-HanHong, SeongbinJeong, YujeongJung, GyuweonLee, Sung-TaeLee, Jong-Ho
DOI
10.1109/TED.2023.3303122
발행일
2023-10-01
유형
Article
저널명
IEEE Transactions on Electron Devices
70
10
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