Annealing Ambient and Film Thickness Dependent NO<inline-formula> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula> Response and 1/f Noise Characteristics of IGZO Resistor-Type Gas Sensors

초록

This study investigates the effects of post-deposition annealing (PDA) ambient and film thickness on the low-frequency noise (LFN) of IGZO thin film gas sensors. Various thicknesses of IGZO thin films are deposited and subjected to post-annealing in different ambient conditions. The oxygen vacancy-rich characteristics of the IGZO films lead to enhanced response and reduced 1/f noise when post-annealed in a vacuum environment. The thinner IGZO material exhibits a greater response than the thicker film, albeit at the expense of more noise. Consequently, the signal-to-noise ratio (SNR) of the 30 nm IGZO film post-annealed in a vacuum environment is the largest. IEEE

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