Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistor

초록

In this study, we investigated the process-dependent dynamic on-resistance [R-DS(on)] characteristics of recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistors with a SiO2 gate oxide. In order to improve the dynamic R-DS(on) characteristics, the processing technology was carefully optimized, including post-metallization annealing and field plate formation. A threshold voltage of 2.0 V was achieved with a breakdown voltage of 1070 V. The fabricated device exhibited a DC R-DS(on) of 5.22 m Omega.cm(2) with very stable dynamic R-DS(on) characteristics, i.e., a less than 20% increase up to the drain voltage of 200 V. (C) 2014 The Japan Society of Applied Physics

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