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Improvement of device performance by co-doping of an emitting dopant with hole and electron-transport materials
- Park, N. R.;
- Ryu, G. Y.;
- Lim, D. H.;
- Lee, S. J.;
- Kim, Y. K.;
- 외 1명
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0초록
We demonstrated that the efficiency of green organic light-emitting diodes (OLEDs) was improved by co-doping with hole transport material, N'-bis-(1-naphyl)-N,N'-dipheny1-1,1'-biphenyl-4,4 '-diamine (NPB) and electron transport material, bis(2-methy1-8-quninolinato)-4phenylphenolate aluminum (BAlq), into emitting layer. Co doping with NPB and BAlq can improve charge balance which makes it possible to enhance device efficiency. The maximum luminous and quantum efficiency of BDAT-P doped device was measured to be 5.56 cd/A and 1.99 %, respectively. Device co-doped with NPB, BAlq and BDAT-P resulted in the most efficient device, in which maximum luminous and quantum efficiency were 8.36 cd/A and 3.19 %, respectively.
키워드
BDAT-P; co-doping; organic light-emitting diodes; green emission; DIODES
- 제목
- Improvement of device performance by co-doping of an emitting dopant with hole and electron-transport materials
- 저자
- Park, N. R.; Ryu, G. Y.; Lim, D. H.; Lee, S. J.; Kim, Y. K.; Shin, D. M.
- 발행일
- 2011
- 유형
- Proceedings Paper
- 저널명
- NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
- 페이지
- 72 ~ 75
- 언어
- ENG
- 출판사
- CRC PRESS-TAYLOR & FRANCIS GROUP
- 발행국가
- 미국
- 분량
- 4 페이지