p-GaN/AlGaN/GaN Micro-LED Integrated with Monolithic Driving IC

초록

The monolithic integration of a driving integrated circuit (IC) with a micro-light-emitting diode (microLED) offers the advantage of transfer-free integration between the LED and the driving IC. A p-GaN/AlGaN/GaN heterojunction platform was employed to fabricate the monolithically integrated driving IC within individual microLED pixels. A 2T1C driving IC, featuring enhancement-mode GaN transistors and a metal-insulator-metal (MIM) capacitor, was designed and monolithically fabricated on a single wafer. The prototype micro-LED pixel with the integrated driving IC demonstrated successful operation, with fast rise and fall times of 20 ns and 50 ns, respectively.

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