Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v

초록

We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ∼ 34 and 27 nF/cm2 with k = ∼ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm2/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 103, stably operating under -5 V. ©The Electrochemical Society.