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증강형 GaN FET 모델링 및 회로 구현에 대한 연구
Study on E-mode GaN FET Modeling and Circuit Implementation
- 신유진;
- 차호영;
- 김현섭
초록
This study presents the modeling and implementation of GaN logic circuits using the MIT Virtual Source GaNFET (MVSG) model for E-mode p-GaN/AlGaN/GaN HFETs. Parameters for E-mode HFET and 2DEG characteristics were determined using the MVSG model, optimized to establish stable logic circuits. Subsequently, GaN logic circuits were fabricated through monolithic integration, demonstrating their stability and potential for driver IC design. The fabricated inverter circuit demonstrated an outstanding noise margin and operated successfully at 500kHz.
키워드
Field-effect transistor; Gallium nitride; Logic circuit; Modeling; Monolithic integration
- 제목
- 증강형 GaN FET 모델링 및 회로 구현에 대한 연구
- 제목 (타언어)
- Study on E-mode GaN FET Modeling and Circuit Implementation
- 저자
- 신유진; 차호영; 김현섭
- 발행일
- 2024-04
- 저널명
- 조명.전기설비학회논문지
- 권
- 38
- 호
- 2
- 페이지
- 133 ~ 138