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Normally-off AlGaN/GaN-on-Si MOS-HFET with a monolithically integrated single-stage inverter as a gate driver
- Han, S. -W.;
- Park, S. -H.;
- Kim, H. -S.;
- Jo, M. -G.;
- Cha, H. -Y.
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3초록
A normally-off AlGaN/GaN-on-Si metal-oxide-semiconductor-heterojunction field-effect transistor (MOS-HFET) with an integrated single-stage inverter is developed. The integrated single-stage GaN inverter consisted of an AlGaN/GaN driver MOS-HFET and a resistive load. With the monolithically integrated gate driver, the gate charging current was boosted from 10 to 170 mA, which reduced the charging and discharging times from 626 to 107 ns and 553 to 196 ns, respectively.
키워드
high electron mobility transistors; MOSFET; aluminium compounds; gallium compounds; invertors; AlGaN-GaN; single-stage inverter; resistive load; metal-oxide-semiconductor-heterojunction field-effect transistor; gate driver; monolithically integrated single-stage inverter; normally-off MOS-HFET
- 제목
- Normally-off AlGaN/GaN-on-Si MOS-HFET with a monolithically integrated single-stage inverter as a gate driver
- 저자
- Han, S. -W.; Park, S. -H.; Kim, H. -S.; Jo, M. -G.; Cha, H. -Y.
- 발행일
- 2017-02-02
- 유형
- Article
- 권
- 53
- 호
- 3
- 페이지
- 198 ~ 199
- 언어
- ENG
- 출판사
- INST ENGINEERING TECHNOLOGY-IET
- 발행국가
- 영국
- 분량
- 2 페이지
- ISSN
- E 1350-911X
P 0013-5194