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초록
Silver Schottky diode on AlGaN/GaN high electron mobility transistor structure was investigated for the application of ethanol sensing. The device showed the decrease of current upon ethanol exposure from the measurement temperature of 200 degrees C due to the increase in Schottky barrier height. At 250 degrees C, the stable and fast current changes depending on the exposed ethanol concentrations from 0.0058 to 5.8% were observed.
키워드
FAST-RESPONSE
- 제목
- GaN based Ethanol Sensor
- 저자
- Jung, Sunwoo; Baik, Kwang Hyeon; Jang, Soohwan
- 발행일
- 2017
- 유형
- Proceedings Paper
- 저널명
- ECS Transactions
- 권
- 75
- 호
- 40
- 페이지
- 9 ~ 12