Temperature-dependent Dielectric Properties in ITO/AF/AI Device

초록

Temperature-dependent dielectric properties were studied in a device with a structure of ITO/amorphous fluoropolymer (AF)/Al. The AF was thermally deposited at a deposition rate of 0.1 angstrom/s to a thickness of 20 nm under a pressure of 5 x 10(-6) Torr. From the dielectric properties of the device, an equivalent circuit for and the equivalent complex impedance Z(eq) of the device were obtained. The interfacial resistance was found to be approximately 38 Omega As the temperature was increased, the radius of the Cole-Cole plot and beta also increased for a constant applied voltage. However, as the applied voltage was increased, those values decreased at a constant temperature. These behaviors are thought to be due to an orientational polarization effect of the molecules inside the AF layer.

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