Comprehensive understanding of electrical characteristics degradation by contact nonideality and effective width loss-dominated scaling in wet-transferred monolayer MoS2 FETs

초록

Two-dimensional semiconductors represent promising channel materials for scaling beyond the fundamental limitations of conventional silicon. In this study, we analyze the electrical properties of wet-transfer-fabricated single-layer MoS2 field-effect transistors (FETs) over a wide width (W) – length (L) range as a function of channel geometry. Specifically, we comprehensively elucidate scaling limitations arising from contact nonidealities and effective width (Weff) loss (ΔW = W – Weff). Based on variable-L and -W transmission line method analyses, we quantitatively decompose the resistive components and elucidate the underlying mechanisms of the observed electrical characteristic trends. It is observed that channel with these observations, it is demonstrated that contact contribution and ΔW are strongly correlated with the apparent mobility of the device based on a quantitative analysis employing a power-law mobility model. Conversely, it is confirmed that channel scaling does not significantly affect positive gate bias stress-induced instability, a phenomenon primarily driven by lateral field stress. These findings provide critical insights suggesting that contact nonideality and ΔW should be considered for improving the electrical characteristics and achieving desirable scaling of wet-transferred monolayer MoS2 FETs. © 2026

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