Fabrication of fully transparent transistors through solution-processing of ZnO quantum dots

초록

ZnO-based transistors were solution-processed by using ZnO quantum dots (QDs) that were well dispersed in 2-methoxyethanol. Spin-casted ZnO QD layer was annealed to remove QD capping organic molecules and increase the connectivity of adjacent QDs. 600°C-annealing of QD channel layer resulted in the highest electrical performances of bottom-gate QD-based transistor. Sn doping into QD channel layer was found to be effective to further improve the electrical characteristics of QD-based transistor. Furthermore, a fully transparent Sn-doped QD-based device was demonstrated by sputter-deposition of Ga-doped ZnO as source-drain transparent electrodes and it electrical properties were characterized.

키워드