The Dependence of Crystal Plane on Hydrogen Sensing Properties of ZnO Bulk Substrates

초록

We investigated the dependence of ZnO crystal plane on hydrogen sensing properties using Pt Schottky diodes on nonpolar m-plane (10 (1) over bar0) ZnO (m-ZnO) and Zn-polar c-plane (0001) ZnO (c-ZnO) bulk substrates. Both of the Pt/ZnO Schottky diode sensors showed the increase in forward and reverse currents when exposed to hydrogen gas at room temperature. The maximum relative current change of m-ZnO diode sensor was measured to be 2748%, which was 3 times higher than that of the c-ZnO diode (844%). The current responses of both the Pt/ZnO diode sensors increased almost linearly with log of hydrogen concentrations. The Pt/m-ZnO Schottky diode showed promising results for the use in hydrogen gas detection at room temperature, possibly due to more active sites available on m-ZnO surface for hydrogen adsorption. (C) 2019 The Electrochemical Society.

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