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A High-Performance, Low-Power 8-Bit Full-Adder Using 8+T Differential SRAM for Computation-inMemory
- Jung, J.;
- Kim, Y.
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3초록
As the amount of data increases in the era of artificial intelligence (AI), in-memory computing (IMC) circuits are being studied to solve the von Neumann bottleneck, a problem in modern computer architecture. This paper proposes an XOR operator based on 8+T differential static random-access memory (8+T SRAM) and an 8-bit Full-Adder based on it. Simulation results in 65 nm show that the XOR operation is 47% faster than the previous method, the Full-Adder is 43% faster, consumes 32% less energy with 14% less transistor. © 2022 IEEE.
키워드
Full-Adder; In-Memory Computing(IMC); Process-in-Memory(PIM); SRAM; XOR operator
- 제목
- A High-Performance, Low-Power 8-Bit Full-Adder Using 8+T Differential SRAM for Computation-inMemory
- 저자
- Jung, J.; Kim, Y.
- 발행일
- 2022-01-01
- 유형
- Proceedings Paper
- 저널명
- Proceedings - International SoC Design Conference 2022, ISOCC 2022
- 페이지
- 131 ~ 132
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- 분량
- 2 페이지
- ISSN
- P 0000-0000