Theoretical study of extreme ultraviolet pellicles with nanometer thicknesses

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초록

Extreme ultraviolet (EUV) pellicles are required for EUV defectivity management in high volume manufacturing (HVM). Theoretical analysis of EUV pellicles of nanometer thickness is helpful for these fabrications. In this paper, for maximum transverse deflection, an analytical–numerical method is contrasted against the finite element method (FEM) due to the ratio of thickness and width length of EUV pellicles. The difference was increased at a thickness of micron unit. Single- and multiple-variable methods of linear regression in deep learning were used to overcome the ANSYS limitation based on FEM, such as the meshing of more than 10 μm thickness, and shear loading, an error in FEM resulting from the impact on the stiffness matrix caused by variations in the length-to-thickness ratio increases in the beam element, respectively. © 2024 Elsevier Ltd

키워드

Computational lithographyEUV lithographyEUV maskEUV pellicleExtreme ultravioletPellicle simulationTransverse deflection
제목
Theoretical study of extreme ultraviolet pellicles with nanometer thicknesses
저자
Kim, Sang-Kon
DOI
10.1016/j.sse.2024.108924
발행일
2024-06
유형
Article
저널명
Solid-State Electronics
216