Milliampere-Level p-Type 2D Zero Differential Transconductance-MVL Device via Asymmetric Acceptor Doping

초록

The limited performance of p-type devices, which remain significantly inferior to their n-type counterparts, is a critical bottleneck in advancing 2D transition-metal dichalcogenide (2D TMDC)-based complementary metal–oxide–semiconductor (CMOS) technology. Moreover, in the context of high-density integration, multivalued logic (MVL) has emerged as a promising approach to reduce device count and interconnect complexity. However, the development of high-performance p-type devices for MVL applications remains largely unexplored. Here, we report an asymmetric Cl doping-induced high-performance p-type zero-differential transconductance (ZDT)-based MVL device. The facile one-pot asymmetric Cl doping in vertically stacked WSe2 channels realizes ternary behavior with three distinct states with a flat middle state within a single device. Owing to the significant efficiency of Cl doping, the resulting p-type ZDT-MVL device shows a high on-current of 1.49 mA. In addition, the Cl-doped p-type FET exhibits a low subthreshold swing (SS) of 74.17 mV dec−1 and achieves a high on-current of 2.83 mA within distinct configurations, respectively. This effective strategy not only achieves high-performance p-type characteristics comparable to those of an n-type FET but also enables the realization of the first 2D TMDC-based p-type ZDT-MVL device, thereby providing a viable platform for CMOS-based MVL systems. © 2026 Wiley-VCH GmbH.

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