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Heteroepitaxial InP growth on a Si(001) substrate using a Ge buffer layer in MOCVD
- Shin, Keun Wook;
- Lee, Sang-Moon;
- Lee, Kiyoung;
- Yoon, Euijoon
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0초록
In this study, we grew InP heteroepitaxial layers on Si(001) substrates with Ge buffer layers. We found out that surface of InP layer was smoothened by adjusting Ge buffer layer. In addition, the suppression of planar defects in InP leaded to the improved crystallinity and optical properties, in spite of the increased threading dislocations. Our study suggested the possibility of combination of III-V and Ge for the future CMOS technologies. © 2023 IEEE.
키워드
Heteroepitaxy; InP and germanium
- 제목
- Heteroepitaxial InP growth on a Si(001) substrate using a Ge buffer layer in MOCVD
- 저자
- Shin, Keun Wook; Lee, Sang-Moon; Lee, Kiyoung; Yoon, Euijoon
- 발행일
- 2023-01-01
- 유형
- Proceedings Paper
- 저널명
- 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- ISSN
- P 0000-0000