A Sensitivity-controllable Shear-stress Sensor with 2 Sets of+45/-45 Degree Semiconductor Resistor-sensor Pair

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초록

In this paper, we investigated the most enhanced shear-stress sensor by using 2 mid-points measurements in a separate +/- 45 degrees semiconductor resistor-sensor pair. Compared to our latest works, we added an additional +/- 45 degrees semiconductor resistor-sensor pair upside down, and the sensitivity was observed to be significantly increased approximately by 100% (2 times) compared to the result for our latest work. Also, we validated our results analytically by error analysis in sensitivity. Furthermore, we proposed a simple and efficient measurement-technique for the shear-stress calculation in which we just needed to measure voltage between the midpoints without the need for calculating the voltage ratio in each resistor-sensor pair. By this technique, we could increase the shear-sensitivity by controlling the common applied voltage between the sensor pairs. As an example, for the applied voltage of 8V between the pair, the sensitivity showed a significant increase by 300 % (4 times).

키워드

Semiconductor stress-sensor; shear-stress; sensitivity; resistor sensor; SILICON
제목
A Sensitivity-controllable Shear-stress Sensor with 2 Sets of+45/-45 Degree Semiconductor Resistor-sensor Pair
저자
Cho, Chun-Hyung; Cha, Ho-Young; Sung, Hyuk-Kee
DOI
10.5573/JSTS.2018.18.2.139
발행일
2018-04
유형
Article; Proceedings Paper
저널명
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
권
18
호
2
페이지
139 ~ 145